An InP-based HBT fab for high-speed digital, analog, mixed-signal, and optoelectronic ICs

Author

Stanchina, W.E. ; Jensen, J.F. ; Walden, R.H. ; Hafizi, M. ; Sun, H.-C. ; Liu, T. ; Raghavan, C. ; Elliott, K.E. ; Kardos, M. ; Schmitz, A.E. ; Brown, Y.K. ; Montes, M.E. ; Yung, M.

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

fYear

1995

fDate

Oct. 29 1995-Nov. 1 1995

Firstpage

31

Lastpage

34

Abstract

Integrated circuits (ICs) utilizing indium phosphide based heterojunction bipolar transistors (HBTs) have set numerous speed and bandwidth records over the past several years. This paper describes the extension of that HBT IC technology to an IC fabrication capability which is quite versatile in being able to produce digital, analog, mixed signal, and optoelectronic ICs within the same process. This enables the fab line to quickly respond to varying demands. Three ICs are discussed which exemplify the capability of this fab: (1) a 7 GHz 12-bit accumulator; (2) a nearly ideal continuous-time-sampling second-order /spl Delta//spl Sigma/ modulator operating at a 3.2 GHz sample rate; and (3) a monolithic 4-channel optoelectronic receiver array capable of 20 Gb/s operation.

Keywords

III-V semiconductors; bipolar analogue integrated circuits; bipolar digital integrated circuits; bipolar integrated circuits; heterojunction bipolar transistors; indium compounds; integrated circuit technology; integrated optoelectronics; mixed analogue-digital integrated circuits; 12 bit; 20 Gbit/s; 3.2 GHz; 7 GHz; InP; accumulator; analog ICs; continuous-time-sampling second-order /spl Delta//spl Sigma/ modulator; digital ICs; heterojunction bipolar transistor; high-speed ICs; indium phosphide; integrated circuit fabrication; mixed-signal ICs; monolithic four-channel optoelectronic receiver array; optoelectronic ICs; Analog integrated circuits; Bandwidth; Bipolar integrated circuits; Delta modulation; Digital integrated circuits; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit technology; Optical device fabrication; Signal processing;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-2966-X

Type

conf

DOI

10.1109/GAAS.1995.528954

Filename

528954