Title :
Analysis of the breakdown phenomena in GaAs MESFETs
Author :
Ashworth, J. ; Lindorfer, P.
Author_Institution :
Siemens Research Laboratories, Otto-Hahn-Ring 6, D-8000 Munich 83
Abstract :
Experimental investigations and 2-D numerical simulations have been performed to obtain a better physical understanding of the breakdown phenomena in GaAs MESFETs. The nature and location of carrier generation in a typical device have been determined and used to qualitatively explain experimentally observed breakdown features. It has been found that holes play an important role in determining breakdown behaviour.
Keywords :
Breakdown voltage; Character generation; Charge carrier processes; Charge carriers; DC generators; Electric breakdown; Gallium arsenide; Impact ionization; MESFETs; Numerical simulation;
Conference_Titel :
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location :
Nottingham, England
