DocumentCode
1934654
Title
Analysis of the breakdown phenomena in GaAs MESFETs
Author
Ashworth, J. ; Lindorfer, P.
Author_Institution
Siemens Research Laboratories, Otto-Hahn-Ring 6, D-8000 Munich 83
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
241
Lastpage
244
Abstract
Experimental investigations and 2-D numerical simulations have been performed to obtain a better physical understanding of the breakdown phenomena in GaAs MESFETs. The nature and location of carrier generation in a typical device have been determined and used to qualitatively explain experimentally observed breakdown features. It has been found that holes play an important role in determining breakdown behaviour.
Keywords
Breakdown voltage; Character generation; Charge carrier processes; Charge carriers; DC generators; Electric breakdown; Gallium arsenide; Impact ionization; MESFETs; Numerical simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436449
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