DocumentCode
1934664
Title
A study of the CoolMOS integral diode: analysis and optimisation
Author
Ng, R. ; Udrea, F. ; Sheng, K. ; Amaratunga, G.A.J.
Volume
2
fYear
2001
fDate
37165
Firstpage
461
Abstract
This paper examines the internal carrier dynamics during reverse recovery of the integral diode present in the CoolMOS FET. The physical processes occurring within the device allows identification of the factors influencing the recovery/transient characteristics of the integral diode. It is also observed that a trade-off exists between the specific on-resistance and the softness of the diode
Keywords
power MOSFET; power semiconductor diodes; CoolMOS FET; carrier dynamics; design optimisation; integral diode; reverse recovery; softness factor; specific on-resistance; transient characteristics; Bridge circuits; Charge carrier lifetime; Circuit simulation; Diodes; FETs; MOSFETs; Medical simulation; Motor drives; Pulse width modulation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-6666-2
Type
conf
DOI
10.1109/SMICND.2001.967505
Filename
967505
Link To Document