DocumentCode
1934674
Title
3D Integration of GaAs MESFET and varactor diode for a VCO-MMIC
Author
Joseph, M. ; Roth, B. ; Scheffer, F. ; Meschede, H. ; Beyer, A. ; Helme, K.
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
229
Lastpage
232
Abstract
For the optimization of MESFET and varactor diode in a monolithic microwave integrated circuit (MMIC) different epitaxial layer structures are required. We report on the 3-d integration of the different devices by stacking the specific layers upon each other. DC and RF performances of the integrated FET are improved introducing an insulating layer sequence. A voltage controlled oscillator (VCO) has been realized with the first design for a frequency of oscillation of 9 GHz.
Keywords
Diodes; Gallium arsenide; MESFET integrated circuits; MMICs; Microwave FET integrated circuits; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Varactors; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436450
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