Title :
Flexible technological process for functional integration
Author :
Imbernon, E. ; Sanchez, J. -L ; Austin, P. ; Breil, M. ; Causse, O. ; Rousset, B. ; Rossel, F.
Author_Institution :
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
Abstract :
In this paper, a flexible technological process suitable for the development of complex integrated power structures based on the functional integration mode is presented. This technological process is based on a succession of basic technological steps corresponding to the fabrication of IGBT devices and compatible specific steps supporting more complex functions
Keywords :
MOS-controlled thyristors; insulated gate bipolar transistors; integrated circuit technology; power MOSFET; power integrated circuits; IGBT devices; MOS-thyristor devices; complex integrated power structures; flexible technological process; functional integration mode; power IC fabrication; Buildings; Design optimization; Fabrication; Insulated gate bipolar transistors; Integrated circuit technology; MOSFETs; Surface resistance; Threshold voltage; Thyristors; Topology;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967506
