DocumentCode
1934684
Title
Flexible technological process for functional integration
Author
Imbernon, E. ; Sanchez, J. -L ; Austin, P. ; Breil, M. ; Causse, O. ; Rousset, B. ; Rossel, F.
Author_Institution
Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France
Volume
2
fYear
2001
fDate
37165
Firstpage
465
Abstract
In this paper, a flexible technological process suitable for the development of complex integrated power structures based on the functional integration mode is presented. This technological process is based on a succession of basic technological steps corresponding to the fabrication of IGBT devices and compatible specific steps supporting more complex functions
Keywords
MOS-controlled thyristors; insulated gate bipolar transistors; integrated circuit technology; power MOSFET; power integrated circuits; IGBT devices; MOS-thyristor devices; complex integrated power structures; flexible technological process; functional integration mode; power IC fabrication; Buildings; Design optimization; Fabrication; Insulated gate bipolar transistors; Integrated circuit technology; MOSFETs; Surface resistance; Threshold voltage; Thyristors; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-6666-2
Type
conf
DOI
10.1109/SMICND.2001.967506
Filename
967506
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