Title :
A system to measure reverse recovery time and stored charge at ultrafast power diodes
Author :
Draghici, Florin ; Jorda, Xavier ; Brezeanu, Gheorghe ; Badila, Marian ; Millan, Jose ; Godignon, Philippe
Author_Institution :
Politehnica Univ. of Bucharest, Romania
Abstract :
This paper presents a reverse recovery time (trr) and stored charge (Qrr) measurement circuit for ultrafast Si and SiC power diodes. The circuit developed according to the JESD24-10 standard specification allows one to obtain 0.1-5 A forward current, 10-100 V reverse voltage and 50-500 A/μs di/dt
Keywords :
charge measurement; elemental semiconductors; power semiconductor diodes; semiconductor device measurement; semiconductor device testing; silicon; silicon compounds; test equipment; time measurement; wide band gap semiconductors; 0.1 to 5 A; 10 to 100 V; JESD24-10 standard specification; Si; Si power diodes; SiC; SiC power diodes; fast switching devices; reverse recovery test circuit; reverse recovery time measurement; stored charge measurement; ultrafast power diodes; Charge measurement; Circuits; Current measurement; Diodes; Power measurement; Q measurement; Silicon carbide; Standards development; Time measurement; Voltage;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967508
