DocumentCode
1934752
Title
A two-dimensional approach to the noise simulation of GaAs MESFETs
Author
Ghione, Giovanni
Author_Institution
Dipartimento di Elettronica, Politecnico di Milano, Piazza Leonardo da Vinci 32, Milano, Italy
fYear
1990
fDate
10-13 Sept. 1990
Firstpage
225
Lastpage
228
Abstract
A two-dimensional technique for the physical noise majority-carrier modeling of GaAs MESFETs is presented, based upon a computationally efficient 2D implementation of the impedance-field method. Preliminary results concerning an epitaxial device on a semi-insulating substrate are discussed.
Keywords
Boundary conditions; Current density; Electrodes; Electron microscopy; Fluctuations; Gallium arsenide; Green´s function methods; Impedance; MESFETs; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1990. ESSDERC '90. 20th European
Conference_Location
Nottingham, England
Print_ISBN
0750300655
Type
conf
Filename
5436453
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