DocumentCode :
1934786
Title :
Atomistic analysis of annealing behavior of amorphous regions
Author :
López, Pedro ; Pelaz, Lourdes ; Marques, Luis A. ; Santos, Ivan ; Aboy, María ; Barbolla, Juan
Author_Institution :
Dpto. de Electricidad y Electronica, Univ. de Valladolid, Spain
fYear :
2005
fDate :
2-4 Feb. 2005
Firstpage :
427
Lastpage :
430
Abstract :
The authors have analyzed the main features regarding the recrystallization of amorphous regions, using an atomistic amorphization-recrystallization model that considers the interstitial-vacancy pair (IV pair) as the building block of the amorphous phase. In the model presented recrystallization is governed by the local rearrangement of atoms, being the local coordination what determines the recrystallization rate. This feature explains why the recrystallization velocity is independent of the depth of the amorphous layer (a-layer). The geometry, and not only the size, is the key factor of amorphous pockets (a-pockets) regrowth. The different annealing behavior of a continuous a-layer and the damage tail are also studied.
Keywords :
amorphisation; amorphous semiconductors; annealing; interstitials; recrystallisation; semiconductor doping; amorphous regions; annealing behavior; atomistic analysis; interstitial vacancy pair; local rearrangement; recrystallization; Amorphous materials; Annealing; Atomic measurements; Computational modeling; Computer simulation; Crystallization; Implants; Impurities; Kinetic theory; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices, 2005 Spanish Conference on
Conference_Location :
Tarragona
Print_ISBN :
0-7803-8810-0
Type :
conf
DOI :
10.1109/SCED.2005.1504472
Filename :
1504472
Link To Document :
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