Atomistic analysis of annealing behavior of amorphous regions

The authors have analyzed the main features regarding the recrystallization of amorphous regions, using an atomistic amorphization-recrystallization model that considers the interstitial-vacancy pair (IV pair) as the building block of the amorphous phase. In the model presented recrystallization is governed by the local rearrangement of atoms, being the local coordination what determines the recrystallization rate. This feature explains why the recrystallization velocity is independent of the depth of the amorphous layer (a-layer). The geometry, and not only the size, is the key factor of amorphous pockets (a-pockets) regrowth. The different annealing behavior of a continuous a-layer and the damage tail are also studied.