Damage buildup model with dose rate and temperature dependence

The authors have developed a novel statistical damage buildup model for BCA ion implant simulator (IIS) code in order to extend its ranges of applicability. The model takes into account the abrupt regime of the crystal-amorphous transition. It works with different temperatures and dose-rates and also models the transition temperature. The authors have tested it with some projectiles (Ge, P) implanted into silicon. In this work the new statistical damage accumulation model based on the modified Kinchin Pease model was described. The results obtained have been compared with existing experimental results.