Channeling of boron in silicon: experiments and simulation

Is order to establish a rigorous test for the various models used to simulate ion implantation in crystalline silicon. we have implanted 17-150 keV boron ions with low doses into ≪111≫ and ≪100≫ silicon in channeling direction. Simulations using the program MARLOWE show that. impact parameter dependent electronic stopping is essential. The binary collision approximation is fully, justified. Moliere and ZBL potential are almost equivalent Although simulation results qualitatively good, some systematic disagreement with experiments can be observed.