DocumentCode
1934964
Title
Analytical Modelling of the Kink Effect in MOS Transistors
Author
Hafez, I.M. ; Ghibaudo, G. ; Balestra, F.
Author_Institution
Laboratoire de Physique des Composants a Semiconducteurs, ENSERG, 23 rue des martyrs, B.P. 257, 38016 Grenoble, France.
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
897
Lastpage
900
Abstract
An analytical model of the kink effect in MOS transistors is proposed. This model procures a comprehensive view of the kink effect in bulk silicon MOSFETs and, subsequently, in SOI devices. It is shown both experimentally and theoretically that the excess drain current induced by the kink effect is proportional to the body transconductance of the device operated at room as well as liquid helium temperatures.
Keywords
Analytical models; Cause effect analysis; Dielectric liquids; Helium; MOSFETs; P-n junctions; Silicon on insulator technology; Temperature; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436458
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