Title :
Design of a V-band single-substrate single-waveguide power-combined frequency doubler covering 50–75 GHz band
Author :
Chen, Zhenhua ; Xu, Jinping
Author_Institution :
State Key Lab. of Millimeter Waves, Southeast Univ., Nanjing, China
Abstract :
In this work, we present the design and evaluation of a power-combined frequency doubler based on a single-substrate single-waveguide topology. Four UMS® Schottky diode chips DBES105a are mounted on a 50-mil-thick double-sided Rogers5880 substrate, which is placed along the E-plane of a single transmission waveguide. This configuration increases the power handling capability of the frequency doubler by an additional factor of 2 without any increase of block size. The design of a bias-less V-band frequency doubler is demonstrated based on this topology. The simulated conversion efficiency is 2.5%-7% across 50-75 GHz band, the peak efficiency appears at 63 GHz and a 32% 3dB bandwidth is achieved when driven with a 20 dBm input power.
Keywords :
Schottky diodes; frequency multipliers; millimetre wave diodes; power combiners; waveguides; DBES105a; UMS Schottky diode chips; V-band single-substrate single-waveguide power-combined frequency doubler; bias-less V-band frequency doubler; double-sided Rogers5880 substrate; efficiency 2.5 percent to 7 percent; efficiency 32 percent; frequency 50 GHz to 75 GHz; single transmission waveguide; single-substrate single-waveguide topology;
Conference_Titel :
Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4673-0901-1
Electronic_ISBN :
978-1-4673-0903-5
DOI :
10.1109/IMWS2.2012.6338234
