DocumentCode :
1935024
Title :
Modeling of Single and Double Gate Thin Film SOI MOSFETs
Author :
Balestra, F. ; Ghibaudo, Gerard ; Benachir, M. ; Brin, J.
Author_Institution :
Laboratoire de Physique des Composants Ã\xa0 semiconducteurs (UA-CNRS), ENSERG/INPG, 23 av. des Martyrs, 38016 Grenoble (France)
fYear :
1989
fDate :
11-14 Sept. 1989
Firstpage :
889
Lastpage :
892
Keywords :
Analytical models; Capacitance; Intersymbol interference; MOSFETs; Semiconductor device reliability; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Thin film transistors; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
Print_ISBN :
0387510001
Type :
conf
Filename :
5436460
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1935024
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