DocumentCode :
1935031
Title :
A Novel Substrate Hot Electron and Hole Injection Structure with a Double Implanted Buried Channel Mosfet
Author :
Sukvoon Yoon ; Siergiej, R. ; White, M.H.
Author_Institution :
Lehigh University, Bethlehem, PA
fYear :
1991
fDate :
17-19 June 1991
Keywords :
Charge carrier processes; Degradation; Drain avalanche hot carrier injection; Electron traps; Hot carriers; Implants; Insulation; Space charge; Substrate hot electron injection; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 1991. 49th Annual
Conference_Location :
Boulder, CO, USA
Print_ISBN :
0-87942-647-0
Type :
conf
DOI :
10.1109/DRC.1991.664731
Filename :
664731
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1935031
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