DocumentCode
1935064
Title
Investigation of charged defects in LPCVD-SiOxNy thin films deposited on (111) Si
Author
Szekeres, A. ; Halova, E. ; Alexandrova, S. ; Modreanu, M.
Author_Institution
Inst. of Solid State Phys., Sofia, Bulgaria
Volume
2
fYear
2001
fDate
37165
Firstpage
519
Abstract
The interface charged defects in amorphous silicon oxynitride (SiO xNy) films deposited on (111) Si have been investigated. The films were deposited by low-pressure chemical vapor deposition (LPCVD) at a temperature of 860°C and at a pressure of 400 mTorr, using a mixture of SiCl2H2-NH3 -N2O. The study was based on the analysis of capacitance-voltage (C-V) characteristics taken at different test signal frequencies. The presence of different types of interface traps explains the observed strong frequency dispersion of the C-V curves. The observed densities of the charged defects are attributed to nitrogen incorporation at the SiOxNy/Si interface, which leads to suppression of defects generation
Keywords
CVD coatings; insulating thin films; interface states; semiconductor-insulator boundaries; silicon compounds; (111) Si substrate; 400 mtorr; 860 C; SiOxNy/Si interface; SiON-Si; amorphous silicon oxynitride thin film; capacitance-voltage characteristics; charged defect; frequency dispersion; interface trap; low-pressure chemical vapor deposition; nitrogen incorporation; Amorphous silicon; Capacitance-voltage characteristics; Chemical analysis; Chemical vapor deposition; Frequency; Nitrogen; Semiconductor films; Signal analysis; Temperature; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-6666-2
Type
conf
DOI
10.1109/SMICND.2001.967519
Filename
967519
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