Title :
Investigation of charged defects in LPCVD-SiOxNy thin films deposited on (111) Si
Author :
Szekeres, A. ; Halova, E. ; Alexandrova, S. ; Modreanu, M.
Author_Institution :
Inst. of Solid State Phys., Sofia, Bulgaria
Abstract :
The interface charged defects in amorphous silicon oxynitride (SiO xNy) films deposited on (111) Si have been investigated. The films were deposited by low-pressure chemical vapor deposition (LPCVD) at a temperature of 860°C and at a pressure of 400 mTorr, using a mixture of SiCl2H2-NH3 -N2O. The study was based on the analysis of capacitance-voltage (C-V) characteristics taken at different test signal frequencies. The presence of different types of interface traps explains the observed strong frequency dispersion of the C-V curves. The observed densities of the charged defects are attributed to nitrogen incorporation at the SiOxNy/Si interface, which leads to suppression of defects generation
Keywords :
CVD coatings; insulating thin films; interface states; semiconductor-insulator boundaries; silicon compounds; (111) Si substrate; 400 mtorr; 860 C; SiOxNy/Si interface; SiON-Si; amorphous silicon oxynitride thin film; capacitance-voltage characteristics; charged defect; frequency dispersion; interface trap; low-pressure chemical vapor deposition; nitrogen incorporation; Amorphous silicon; Capacitance-voltage characteristics; Chemical analysis; Chemical vapor deposition; Frequency; Nitrogen; Semiconductor films; Signal analysis; Temperature; Testing;
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
DOI :
10.1109/SMICND.2001.967519
