Title :
Investigation of millimeter-wave GaN HEMTs and a quick small-signal modeling method
Author :
Zhong, Zheng ; Guo, Yong-Xin ; Zhou, Jianjun ; Chen, Chen
Author_Institution :
Sci. & Technol. on Monolithic Integrated Circuits & Modules Lab., Nanjing Electron. Devices Inst., Nanjing, China
Abstract :
Recently, wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to RF/microwave transmitters for communications and radar systems. Of the various wide bandgap materials and device technologies, the AlGaN/GaN high-electron mobility transistor seems the most promising. This paper attempts to investigate the status of updated GaN HEMTs technology with a view of highlighting both the progress and prospects. Besides, a quick small-signal modeling method has been presented for instant MMIC designs.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; gallium compounds; high electron mobility transistors; millimetre wave transistors; wide band gap semiconductors; AlGaN-GaN; MMIC designs; RF-microwave transmitters; high-electron mobility transistor; millimeter-wave HEMT; power conditioning; power electronics applications; radar systems; small-signal modeling method; wide bandgap semiconductors; Current measurement; Gallium nitride; HEMTs; MODFETs; Photonic band gap; Semiconductor device measurement;
Conference_Titel :
Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4673-0901-1
Electronic_ISBN :
978-1-4673-0903-5
DOI :
10.1109/IMWS2.2012.6338238
