Title :
Explanation for the Negative Differential Resistance in SOI-MOSFETs
Author :
Mcdaid, J. ; Hall, S. ; Mellor, P.H. ; Eccleston, W. ; Alderman, J.C.
Author_Institution :
The University of Liverpool, Department of Electrical Engineering and Electronics, Brownlow Hill, P.O. Box 147, Liverpool, L69 3BX.
Abstract :
The negative resistance region seen in the output characteristics (IDS(VGS) vs vDS) of silicon-on-insulator MOSFETs to be a result of the relatively poor thermal properties of the buried insulator compared with the Si-substrate. At sufficiently high power levels, the device island heats up causing degradation of the carrier mobility and a consequent limiting of the outptrt current This thermal self-limiting is also responsible for the deaparture from the ideal MOSFET ``square´´ law which should be evident for these transistors having minimal ``body´´ effect.
Keywords :
Conductive films; Equations; Immune system; Insulation; MOSFETs; Semiconductor films; Silicon on insulator technology; Thermal resistance; Thin film devices; Thin film transistors;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
