DocumentCode
1935101
Title
Characterization and Simulation of SOI-CMOS Devices for 3D-integration
Author
GÖtzlich, J. ; Kircher, R. ; Giesen, K. ; Poschl, G.
Author_Institution
Siemens AG, Otto-Hahn-Ring 6, 8000 Mÿnchen 83, FRG
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
873
Lastpage
876
Abstract
SOI MOSFETs were fabricated in argon laser recrystallized silicon layers. The SOI film thickness was varied between 100nm and 350 nm using a planarizing etch back technique. The electrical characteristics of the devices were compared with two-dimensional device simulations.
Keywords
Argon; Circuits; Electric variables; Etching; MOSFETs; Planarization; Semiconductor films; Silicon; Temperature; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436464
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