Title :
Flip-chip assembled 60GHz CMOS receiver front-end
Author :
Tsuru, M. ; Tanaka, T. ; Inagaki, R. ; Taniguchi, E. ; Nakayama, M. ; Kameda, S. ; Suematsu, N. ; Takagi, T. ; Tsubouchi, K.
Author_Institution :
Mitsubishi Electr. Corp., Kamakura, Japan
Abstract :
This paper presents an flip-chip assembled 60GHz CMOS receiver front-end. The receiver front-end consists of a cascode LNA, a balun, a harmonic mixer, and an IF amplifier fabricated by 90nm CMOS. The flip-chip assembled cascode LNA performs 31.1dB gain as well as on-wafer probing with NF of 5.8dB and output P1dB of -3.9dBm at 60GHz while consuming 26.9mW. The flip-chip assembled receiver front-end performs 21.3dB of conversion gain.
Keywords :
CMOS integrated circuits; field effect MIMIC; flip-chip devices; millimetre wave receivers; CMOS process; IF amplifier; balun; cascode LNA; flip-chip assembled CMOS receiver front-end; frequency 60 GHz; gain 21.3 dB; harmonic mixer; noise figure 5.8 dB; on-wafer probing; power 26.9 mW; size 90 nm; CMOS integrated circuits; FETs; Flip chip; Gain; Noise measurement; Receivers; Substrates; CMOS; Flip-chip; Front-end; Millimeter-Wave; Receiver;
Conference_Titel :
Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International
Conference_Location :
Nanjing
Print_ISBN :
978-1-4673-0901-1
Electronic_ISBN :
978-1-4673-0903-5
DOI :
10.1109/IMWS2.2012.6338241
