• DocumentCode
    1935159
  • Title

    Analysis of Nonuniformly Doped SOI MOSFETs

  • Author

    Paelinck, P. ; Vancauwenberghe, O. ; van de Wiele, F.

  • Author_Institution
    Laboratoire de Microélectronique, Université Catholique de Louvain, Place du Levant 3, 1348 Louvain-la-Neuve, Belgium
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    307
  • Lastpage
    310
  • Abstract
    A one-dimensional device simulator is developed for nonuniformly doped SOI MOSFET´s which allows to calculate accurately and reliably their electrical characteristics in the linear region. NMOS and PMOS transistors have been successfully optimized in relation to the process implantation parameters. Comparison with experimental results is presented.
  • Keywords
    Boron; Doping; Electric variables; Impedance; Impurities; Interface states; Leakage current; MOS devices; MOSFETs; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436466
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1935159