Title :
Analysis of Nonuniformly Doped SOI MOSFETs
Author :
Paelinck, P. ; Vancauwenberghe, O. ; van de Wiele, F.
Author_Institution :
Laboratoire de Microélectronique, Université Catholique de Louvain, Place du Levant 3, 1348 Louvain-la-Neuve, Belgium
Abstract :
A one-dimensional device simulator is developed for nonuniformly doped SOI MOSFET´s which allows to calculate accurately and reliably their electrical characteristics in the linear region. NMOS and PMOS transistors have been successfully optimized in relation to the process implantation parameters. Comparison with experimental results is presented.
Keywords :
Boron; Doping; Electric variables; Impedance; Impurities; Interface states; Leakage current; MOS devices; MOSFETs; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
