Millimeter-wave design and fabrication of GaAs micromachined patch antenna

Author

Li-na, Pan ; Shi-xing, Jia ; Fang, Hou ; Jian, Zhu ; Yuan-wei, Yu

Author_Institution

Nanjing Electron. Devices Inst., Nanjing, China

fYear

2012

fDate

18-20 Sept. 2012

Firstpage

1

Lastpage

3

Abstract

A patch antenna at Ka-band frequency based on GaAs micromachined technologies is presented in this paper. The antenna fabricated on 300μm-thick GaAs substrate with a cavity etched in it produces a low effective dielectric region around the patch leading to improvement of bandwidth and radiation. The bandwidth of 4.1%, gain of 7.27dB and radiation efficiency of 79.5% at 36.3GHz have been simulated. The experimental results show that the bandwidth is 4.4% at 36.29GHz.

Keywords

III-V semiconductors; gallium arsenide; microfabrication; micromachining; microstrip antennas; millimetre wave antennas; GaAs; Ka-band frequency; frequency 36.29 GHz; frequency 36.3 GHz; gain 3 dB; low effective dielectric region; micromachined patch antenna; millimeter-wave design; size 300 mum; Bandwidth; Cavity resonators; Gallium arsenide; Patch antennas; Substrates; Ka waveband; bandwidth; dry etching; micro-electromechanical systems (MEMS) antenna;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Workshop Series on Millimeter Wave Wireless Technology and Applications (IMWS), 2012 IEEE MTT-S International

Conference_Location

Nanjing

Print_ISBN

978-1-4673-0901-1

Electronic_ISBN

978-1-4673-0903-5

Type

conf

DOI

10.1109/IMWS2.2012.6338246

Filename

6338246