DocumentCode
1935322
Title
A New Method of Interface Trap Modeling in Quantized MOSFET Inversion Layers
Author
Siergiej, R.R. ; Yoon, S. ; White, M.H.
Author_Institution
Sherman Fairchild Center for Solid State Studies, Lehigh University, Pa.
fYear
1991
fDate
17-19 June 1991
Keywords
Charge pumps; Electron traps; Energy capture; Energy states; MOSFET circuits; Quantization; Semiconductor process modeling; Statistics; Surface treatment; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 1991. 49th Annual
Conference_Location
Boulder, CO, USA
Print_ISBN
0-87942-647-0
Type
conf
DOI
10.1109/DRC.1991.664732
Filename
664732
Link To Document