DocumentCode :
1935326
Title :
Computer Simulation of Transient Charge Collection from Ionizing Radiation in Silicon Junctions
Author :
Belhaddad, H. ; Gaillard, R. ; Poirault, G. ; Poncet, A.
fYear :
1989
fDate :
11-14 Sept. 1989
Firstpage :
817
Lastpage :
820
Keywords :
Analytical models; Circuit simulation; Computational modeling; Computer simulation; Doping; Flexible printed circuits; Ionizing radiation; Silicon; Substrates; Transient analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
Print_ISBN :
0387510001
Type :
conf
Filename :
5436474
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1935326
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