Title :
Model for Simulation of Soft Error Rate of Megabit DRAMs
Author :
Krautschneider, W.H. ; Künemund, Th
Author_Institution :
Siemens, Central Research and Development, Microelectronics, D-8000 Munich 83, West Germany
Abstract :
A major constraint in designing dynamic memories of the 4 or 16 megabit level are soft errors caused by natural alpha radiation. This dictates a minimum capacitance for meeting the soft error rate (SER) specifications. A self-consistent engineering model has been developed for simulating the SER in dependence on memory cell and circuit parameters. SERs with different memory technologies will be presented and discussed.
Keywords :
Alpha particles; Aluminum; Circuits; Electronics packaging; Error analysis; Microelectronics; Niobium; Particle tracking; Radioactive materials; Research and development;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
