DocumentCode :
1935409
Title :
Modelling of the Drain Lag Effect in GaAs MESFET´s and its Impact on Digital IC´s
Author :
Ducourant, Thierry ; Rocchi, Marc
Author_Institution :
LEP: Laboratoires d´´Electronique et de Physique Appliqée, Membre de l´´Organisation de Recherche Internationale de Philips, 3, avenue Descartes, 94451 LIMEIL-BREVANNES CEDEX, France
fYear :
1987
fDate :
14-17 Sept. 1987
Firstpage :
313
Lastpage :
316
Keywords :
Application specific integrated circuits; Degradation; Digital integrated circuits; Electrons; Frequency dependence; Frequency measurement; Gallium arsenide; Integrated circuit modeling; MESFET integrated circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
Print_ISBN :
0444704779
Type :
conf
Filename :
5436478
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1935409
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