DocumentCode :
1935440
Title :
A novel technique for nonvolatile data storage using avalanche degradation
Author :
Schoeman, Justin F. ; du Plessis, M.
Author_Institution :
Dept. of Electron. & Comput. Eng., Pretoria Univ., South Africa
Volume :
2
fYear :
2001
fDate :
37165
Firstpage :
577
Abstract :
A novel technique for nonvolatile data storage is presented. Data storage is achieved by inducing avalanche degradation in bipolar junctions. The resulting change in junction characteristics can be determined, and the stored value recovered. This technique can operate at lower voltages than conventional standard-CMOS EEPROM devices, but it is slower, and requires more power. Such devices could be ideal for implementation in embedded systems, where small amounts of embedded memory are required, but the cost of the additional EEPROM processing steps is prohibitive
Keywords :
EPROM; avalanche breakdown; failure analysis; integrated circuit yield; semiconductor storage; EEPROMs; avalanche degradation; bipolar junctions; embedded memory; embedded systems; nonvolatile data storage; yield; Annealing; Application software; BiCMOS integrated circuits; Bipolar transistors; Electrons; Hot carriers; Memory; Stress; Temperature; Thermal degradation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2001. CAS 2001 Proceedings. International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-6666-2
Type :
conf
DOI :
10.1109/SMICND.2001.967536
Filename :
967536
Link To Document :
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