Title :
Extended Abstracts of International Workshop on Gate Insulator [Front matter and table of contents]
Abstract :
Presents the front matter and table of contents for the conference proceedings.
Keywords :
dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; permittivity; semiconductor device reliability; silicon compounds; SiO/sub 2/; SiO/sub 2/ dielectric; SiO/sub 2/ reliability; gate insulators; high-k dielectric materials; high-k dielectric properties;
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
DOI :
10.1109/IWGI.2001.967537
