DocumentCode
1935463
Title
Extended Abstracts of International Workshop on Gate Insulator [Front matter and table of contents]
fYear
2001
fDate
1-2 Nov. 2001
Abstract
Presents the front matter and table of contents for the conference proceedings.
Keywords
dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; permittivity; semiconductor device reliability; silicon compounds; SiO/sub 2/; SiO/sub 2/ dielectric; SiO/sub 2/ reliability; gate insulators; high-k dielectric materials; high-k dielectric properties;
fLanguage
English
Publisher
ieee
Conference_Titel
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-021-6
Type
conf
DOI
10.1109/IWGI.2001.967537
Filename
967537
Link To Document