Title :
Plasma Enhanced Chemical Vapour Deposition of Tungsten on Silicon and Silicon Dioxide Substrates
Author :
Hodson, C.M.T. ; Wood, J. ; Middleton, M.
Author_Institution :
Department of Electronics, University of York, Heslington, York YO1 5DD, England.
Abstract :
Tungsten films have been deposited onto silicon and silicon dioxide substrates by plasma enhanced chemical vapour deposition, using the reaction of tungsten hexafluoride and hydrogen. The deposition rate, sheet resistance, and adhesion of the films have been studied as a function of the process parameters: substrate temperature, gas flow and composition, and pressure. Adherent tungsten films with sheet resistances lower than 1 ohm per square have been produced.
Keywords :
Chemical vapor deposition; Fluid flow; Hydrogen; Optical films; Plasma chemistry; Plasma temperature; Semiconductor films; Silicon compounds; Substrates; Tungsten;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
