Characterization of N-in-N microstrip radiation detectors fabricated on different silicon substrates

N-in-N microstrip radiation detectors have been fabricated at the IMB-CNM facilities on standard float zone, diffusion oxygenated float zone and magnetic Czochralski silicon substrates. A first electrical characterization shows that the devices have a good behavior, with low leakage currents and an average full depletion voltage of 55 V for the devices processed on float zone silicon and 330 V for those processed on Czochralski material.