DocumentCode :
1935654
Title :
Two-dimensional Simulation of SOI MOSFETs
Author :
Belhaddad, H. ; Poncet, A. ; Merckel, G.
Author_Institution :
Nucletudes S.A. Avenue du Hoggar, Z.A. Courtaboeuf BP 117 - F - 91944 LES ULIS Cedex
fYear :
1989
fDate :
11-14 Sept. 1989
Firstpage :
763
Lastpage :
766
Keywords :
Breakdown voltage; Character generation; Computational modeling; Computer simulation; Current measurement; Electric variables measurement; Integrated circuit modeling; Ionization; MOSFETs; Thickness measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
Print_ISBN :
0387510001
Type :
conf
Filename :
5436488
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1935654
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