• DocumentCode
    1935673
  • Title

    RF performance limitation of high-k AlTiOx and Al2O3 gate dielectrics

  • Author

    Chin, Albert ; Chen, S.B. ; Chan, K.T. ; Hsieh, J.C. ; Chang, M.H. ; Lin, C.C. ; Liu, J. ; Chen, K.M.

  • Author_Institution
    Dept. of Electron. Eng., Nat. Chiao Tung Univ., Taiwan
  • fYear
    2001
  • fDate
    1-2 Nov. 2001
  • Firstpage
    62
  • Lastpage
    63
  • Abstract
    In this paper, we have characterized the RF performance of high-k Al/sub 2/O/sub 3/ and AlTiO/sub x/ capacitors and compared with SiO/sub 2/. We have found that significant k reduction occurs in high-k dielectric and SiO/sub 2/ at high frequencies and is strong material dependent. This may be a limitation of high-k dielectric. The relatively large shot noise in gate dielectric is strongly dependent on material and sensitive to defect generation after stress.
  • Keywords
    MOS capacitors; alumina; aluminium compounds; dielectric thin films; shot noise; titanium compounds; Al/sub 2/O/sub 3/; AlTiO; MOS capacitor; RF characteristics; defect generation; high-k gate dielectric; shot noise; Capacitance; Capacitors; Dielectric measurements; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Noise generators; Noise measurement; Radio frequency; Transmission line measurements;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-021-6
  • Type

    conf

  • DOI
    10.1109/IWGI.2001.967548
  • Filename
    967548
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1935673