DocumentCode
1935699
Title
Modelling and Simulation of Wave Propagation Effects in MESFET Devices based on Physical Models
Author
Ghione, Giovanni ; Naldi, Carlo U.
Author_Institution
Dipartimento di Elettronica, Politeenico di Torino, Corso Duca degli Abruzzi 24, 10129 TORINO, Italy
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
317
Lastpage
320
Abstract
Propagation effects along the electrodes of single- and multi-gate MESFETs are analyzed by means of new model which directly exploits two-dimensional small-signal simulation. The electromagnetic behaviour is characterized through a quasi-TEM multiconductor line model, and preliminary results are presented concerning the influence of gate width on the overall device performances.
Keywords
Analytical models; Electrodes; Electromagnetic coupling; Electromagnetic devices; Electromagnetic modeling; Electromagnetic propagation; MESFETs; Microwave propagation; Power transmission lines; Propagation losses;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436490
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