• DocumentCode
    1935777
  • Title

    Performance effects of two nitrogen incorporation techniques on TaN/HfO2 and poly/HfO2 MOSCAP and MOSFET devices

  • Author

    Nieh, Renee ; Onishi, Katsunori ; Choi, Rino ; Cho, Hag-Ju ; Seok Kang, Chang ; Gopalan, Sundar ; Krishna, Siddarth ; Lee, Jack C.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
  • fYear
    2001
  • fDate
    1-2 Nov. 2001
  • Firstpage
    70
  • Lastpage
    74
  • Abstract
    In the coming MOS generations, scaling trends will force the replacement of SiO/sub 2/ as the gate dielectric. Due to constraints - primarily high gate leakage current - SiO/sub 2/ will likely be replaced by a high dielectric constant or high-k material. This paper will attempt to address some of the high-k material concerns by presenting promising results on HfO/sub 2/ stack structures with two forms of nitrogen incorporation - surface nitridation and top nitridation.
  • Keywords
    MOS capacitors; MOSFET; dielectric thin films; hafnium compounds; nitridation; tantalum compounds; MOSCAP; MOSFET; Si-HfO/sub 2/; TaN-HfO/sub 2/; TaN/HfO/sub 2/ structure; high-k gate dielectric; nitrogen incorporation; poly/HfO/sub 2/ structure; surface nitridation; top nitridation; Amorphous magnetic materials; Annealing; Argon; Electrodes; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Nitrogen; Silicon; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-021-6
  • Type

    conf

  • DOI
    10.1109/IWGI.2001.967550
  • Filename
    967550
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1935777