Title :
CMOS-SOI Technologies for High Speed and Radiation Hard Circuits
Author :
Auberton-Herve, A.J.
Author_Institution :
C. E. A -IRDI- LETI Centre d´´Etudes Nucléaires de Grenoble, B. P. 85X 38041 GRENOBLE CEDEX - FRANCE
Abstract :
SOI is a very promising technology for CMOS-VLSI applications. The use of thin silicon film drastically improves the device characteristics. In this paper we will discuss the main trends to perform a CMOS-SOI technology for high-speed and rad-hard applications.
Keywords :
CMOS technology; Circuits; Fabrication; Isolation technology; Radiation hardening; Semiconductor films; Silicon; Space technology; Temperature; Tin;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
