Annealing of Hot Carrier Damaged Double Metal MOSFET

The annealing of damage induced by static hot carrier aging on double metal AMOS devices was investigated. To get more insight about the nature of hot carrier damage a new experimental approach is proposed: devices were subjected to cycles of hot carrier stress, followed by annealing at fixed temperature. The activation energy for the bake recovery of parameters was evaluated. The method allows to distinguish between permanent and recoverable hot carrier effects. The recovery kinetics Suggests that the prevailing degradation source is electron trapping into shallow interface states induced by double metal processing.