A 3.3 V front-end receiver GaAs MMIC for the digital/analog dual-mode hand-held phones

Author

Chung-Hwan Kim ; Min-Gun Kim ; In-Gab Hwang ; Chang-Seok Lee ; Jong-Lam Lee ; Eung-Gie Oh ; Jeon-Wook Yang ; Chul-Soon Park ; Kyung-Sik Yoon ; Kwang-Eui Pyun ; Hyung-Moo Park

Author_Institution

Semicond. Technol. Div., Electron. & Telecommun. Res. Inst., Daejeon, South Korea

fYear

1995

fDate

Oct. 29 1995-Nov. 1 1995

Firstpage

55

Lastpage

58

Abstract

A front-end receiver MMIC for 3.3 V-operating CDMA/AMPS dual-mode hand held phone has been developed using a GaAs MESFET process. The developed MMIC, chip size of which is 1.9/spl times/3.9 mm/sup 2/ shows noise figure of 2.8 dB, power gain of 35/25 dB at the nominal current consumption of 22.5/16.1 mA in CDMA/AMPS modes, respectively.

Keywords

III-V semiconductors; MESFET integrated circuits; UHF integrated circuits; cellular radio; code division multiple access; cordless telephone systems; digital radio; field effect MMIC; gallium arsenide; radio receivers; 16.1 mA; 2.8 dB; 22.5 mA; 25 dB; 3.3 V; 35 dB; CDMA/AMPS dual-mode operation; GaAs; GaAs MESFET process; UHF IC; digital/analog hand-held phones; front-end receiver MMIC; Circuit simulation; FETs; Gain; Gallium arsenide; Heterojunction bipolar transistors; MESFETs; MMICs; Mobile communication; Multiaccess communication; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1995. Technical Digest 1995., 17th Annual IEEE

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-2966-X

Type

conf

DOI

10.1109/GAAS.1995.528960

Filename

528960