Title :
Advanced Simulation for Reliability Optimization of Submicron LDD MOSFETs
Author :
Orlowski, Marius ; Mazure, C. ; Lill, A. ; Mühlhoff, H. -M ; Hausch, W. ; Schwerin, A.A. ; Neppl, I.
Author_Institution :
Siemens AG, Corporate Research and Development, Otto-Hahn-Ring 6, 8000 Mÿnchen 83, FRG
Abstract :
We present an advanced technique for optimization of source/drain structures of submicron MOSFETs with respect to hot carrier degradation. This technique is based on the simulation and analysis of the distribution of hot electrones and holes injected into the gate oxide obtained from a consistent, temperature-dependent gate and substrate current model. This method allows to judge the reliability performance of S/D Structures which the analysis of the electric fields fails to provide the necessary insight. The applicability of the method is demonstrated by comparison with experimental data from sub¿m-logic and 16M DRAM MOSFETs.
Keywords :
Analytical models; Charge carrier processes; Degradation; Discrete event simulation; Electrons; Interface states; Large Hadron Collider; MOSFETs; Optimization methods; Performance analysis;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
