Title :
Gate insulator characteristics on the bonded thick SOI wafers for automotive IC applications
Author :
Ito, Hiroyasu ; Isobe, Yoshihiko ; Mizuno, Shoji ; Kawamoto, Kazunori
Author_Institution :
Electron. Device Res. & Dev. Center, Denso Corp, Aichi, Japan
Abstract :
For the robustness of harsh environments around automotive ICs, such as negative surge and ESD, the authors have committed the thick SOI BiCDMOS process with trench dielectric isolations. This paper focuses on causes degrading reliability of gate insulators such as silicon dioxides and ONO (Oxide Nitride Oxide) films induced by the process.
Keywords :
BiCMOS integrated circuits; automotive electronics; integrated circuit reliability; isolation technology; silicon-on-insulator; wafer bonding; BiCDMOS process; ESD; ONO film; Si-SiO/sub 2/; SiO/sub 2/-Si/sub 3/N/sub 4/-SiO/sub 2/; automotive IC; bonded thick SOI wafer; gate insulator; harsh environment; negative surge; reliability; trench dielectric isolation; Automotive engineering; Degradation; Dielectrics and electrical insulation; Electrostatic discharge; Robustness; Semiconductor films; Silicon compounds; Silicon on insulator technology; Surges; Wafer bonding;
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
DOI :
10.1109/IWGI.2001.967565
