• DocumentCode
    1936151
  • Title

    Current Crowding in Nested and Self-aligned Micrometric Contacts

  • Author

    Dellagiovanna, M. ; De Santi, G. ; Circelli, N. ; Scorzoni, A.

  • Author_Institution
    SGS-Thomson Microelectronics R.& D. Central Dep., 20041 Agrate Brianza (Mi) - Italy
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    699
  • Lastpage
    703
  • Abstract
    A comparison between interfacial contact resistance (Ri) and End Resistance (Re) on n+ nested and self-aligned contacts metallized with two different schemes: Al-1% Si and Ti/TiN/Al-Si is presented. The quite different values of Ri and Re on the contacts with Ti TiN/Al-Si have been explained according to the considerable current crowding phenomenon which occurs when the tranfer length ´´lt´´ of the contact (defined by the transmission line model) is much shorter than the contact linear dimension.
  • Keywords
    Contact resistance; Current measurement; Implants; Kelvin; Metallization; Microelectronics; Proximity effect; Resistors; Tin; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436507
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1936151