Charge Transport Near the Si/SiO2 Interface in MOSFET Devices

The influence of quantum mechanical corrections of particle density near the Si/SiO2 interface on the channel mobility of a MOSFET is investigated by an approximation of the quantum statistical expectation values and by an exact solution of Schrödinger´s equation perpendicular to the interface. A new model for mobility reduction at the interface is derived. The model is implemented in the device simulator MINIMOS, the results show good agreement with n-and p-channel devices of the 4M-DRAM generation.