DocumentCode
1936171
Title
First-principle theoretical study on reliability SiO2 thin films under external electric field
Author
Doi, K. ; Nakamura, K. ; Tachibana, A.
Author_Institution
Dept. of Eng. Phys., Kyoto Inst. of Technol., Japan
fYear
2001
fDate
1-2 Nov. 2001
Firstpage
148
Lastpage
151
Abstract
Dielectric breakdown of silicon dioxide (SiO/sub 2/) thin film has been a critical issue in the reliability of advanced electronic devices. A mechanism of the dielectric breakdown has been traced as the migration of the interstitial hydrogen (H) atom. Incompletely oxidized silicon (Si) is another issue of SILC. We have carried out first-principle calculations for SiO/sub 2/ thin films with interstitial H atoms and also investigated the migration of oxygen atoms in Si thin film. The methods were based on the regional density functional theory which enables as to calculate the finite-temperature electronic structures under the external electric fields and electronic currents.
Keywords
band structure; density functional theory; dielectric thin films; diffusion; electric breakdown; elemental semiconductors; exchange interactions (electron); interstitials; oxidation; oxygen; permittivity; potential energy surfaces; semiconductor thin films; silicon; silicon compounds; Si thin film; Si:O; SiO/sub 2/ thin films; SiO/sub 2/:H; dielectric breakdown; external electric field; finite-temperature electronic structure; first-principles study; incompletely oxidized silicon; interstitial hydrogen migration; oxygen atom migration; regional density functional theory; reliability; Atmosphere; Atmospheric modeling; Density functional theory; Dielectric thin films; Electrons; Kinetic energy; Quantum mechanics; Reliability theory; Transistors; Wave functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-021-6
Type
conf
DOI
10.1109/IWGI.2001.967568
Filename
967568
Link To Document