Characterization of MOSFET Gate Oxides by Injection of Controlled Quantities of Electrons

A simple technique is presented for uniformly injecting a controlled quantity of electrons in a range from 10¹⁰ cm^-2 to 10¹⁸ cm^-2 into the gate oxide of small-geometry MOS transistors. It can be used for probing oxide characteristics and oxide stability under hot electron stress. In conjunction with a refined evaluation of charge pumping experiments, the influence of hot electron injection on spatial and energetic trap distribution is studied.