• DocumentCode
    1936222
  • Title

    Anomalous Punchthrough in ULSI Buried-channel P-MOSFETs

  • Author

    Skotnicki, Tomasz ; Merckel, Gérard ; Pedron, Thierry

  • Author_Institution
    Centre National d´´Etude des Télécommunications (CNET-CNS), B.P. 98, Chemin du Vieux Chene 38243 Meylan, FRANCE
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    683
  • Lastpage
    686
  • Keywords
    CMOS process; Doping; Implants; MOSFET circuits; Numerical simulation; Power MOSFET; Power dissipation; Tellurium; Ultra large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436511
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1936222