Title :
Effect of oxygen pressure on the structure and thermal stability of ultrathin Al2O3 film
Author :
Kundu, Manisha ; Miyata, Naoyuki ; Ichikawa, Masayuki
Author_Institution :
Angstrom Technol. Partnership, Joint Res. Center for Atom Technol., Ibaraki, Japan
Abstract :
We were successful in the growth of uniform, stoichiometric, and ultrathin Al2O3 film with an atomically abrupt interface with Si(001). High-pressure reoxidation (HPO)oxidation led to the formation of interfacial SO2 film, which grew in a layered manner. The oxygen pressure of the ambience plays an important role in the transport, chemical reactions and stability of the Al2O3/Si(001) interface at various substrate temperatures.
Keywords :
Auger electron spectra; CMOS integrated circuits; X-ray photoelectron spectra; alumina; dielectric thin films; permittivity; reflection high energy electron diffraction; scanning electron microscopy; shrinkage; surface structure; thermal stability; vacuum deposited coatings; 9 eV; AES; Al/sub 2/O/sub 3/; Auger electron spectra; CMOS devices; O/sub 2/ pressure effect; RHEED; SREM; Si; SiO/sub 2/-based gate dielectrics; X-ray photoelectron spectra; XPS; aggressive shrinking; band gap; dielectric constant; film structure; gate oxide material; nanometer scales; reflection high-energy electron diffraction; scanning reflection electron microscopy; surface structure; thermal processing; thermal stability; ultrathin films; CMOS process; Dielectric constant; High-K gate dielectrics; Optical films; Spectroscopy; Thermal stability;
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
DOI :
10.1109/IWGI.2001.967571
