DocumentCode
1936267
Title
Self-heating and Temperature Measurement in Sub-¿m-MOSFETs
Author
Mautrý, P.G. ; Trager, J.
Author_Institution
Siemens AG, HLT 131, Otto-Hahn-Ring 6, D-8000 Munich 83, FRG
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
675
Lastpage
678
Abstract
For the first time we report the observation of lattice self-heating effects by temperature measurements inside sub-¿m MOSFETs and by dynamic drain current measurements with a time resolution of 3 ns. The temperature dependent electrical resistance of a polysilicon gate has been used as the temperature sensor. With decreasing channel length L the temperature increase rises faster than 1/L. For a n-channel MOSFET with design dimensions W/L = 10/0.6 ¿m the temperature rise approach 60 K at supply voltage of 5.0 V.
Keywords
Density measurement; Electric variables measurement; Electrical resistance measurement; Length measurement; MOSFETs; Power measurement; Temperature dependence; Temperature distribution; Temperature measurement; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436513
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