DocumentCode
1936297
Title
A Three-Dimensional Model with Distributed Elements for GaAs MESFETs and Similar Devices
Author
Wiesbeck, W. ; Haffa, S. ; Feldle, H.P.
Author_Institution
University of Karlsruhe, 7500 Karlsruhe Germany
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
325
Lastpage
328
Abstract
The technological advances in active microwave and mm-wave semiconductors like GaAs-MESFETs and HEMTs e.g. planar and recessed gate structures will result in the near future in components with cutoff frequencies of several hundred GHz. For modelling of these elements it is mandatory to take distributed elements and active and passive coupling into account. To realize this, a three-dimensional model has been developed, which involves distributed elements, coupling and wave propagation. The results show the typical effects of a slow and a fast wave propagation in lossy media with open-ended lines.
Keywords
Electrodes; Equivalent circuits; FETs; Frequency; Gallium arsenide; MESFETs; Microwave devices; Mutual coupling; Propagation losses; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436514
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