Title :
Kinetic study of ZrO2-CVD process
Author :
Kawamoto, T. ; Nishinaka, I. ; Shimogaki, Y.
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Japan
Abstract :
As silicon complementary MOS are scaled below 100 nm, high-k gate dielectrics will be required to obtain equivalent oxide thickness (EOT) < 1.0 nm. Among various candidates to replace SiO/sub 2/, ZrO/sub 2/ has attracted a lot of attention recently due to their thermodynamic stability in contact with Si. We investigated ZrO/sub 2/ gate application in terms of the ZrO/sub 2/ CVD process.
Keywords :
chemical vapour deposition; dielectric thin films; thermal stability; thermodynamic properties; zirconium compounds; 1.0 nm; 100 nm; ZrO/sub 2/; ZrO/sub 2/ gate application; ZrO/sub 2/-CVD process; equivalent oxide thickness; high-k gate dielectrics; kinetic study; thermodynamic stability; Amorphous materials; High K dielectric materials; Impurities; Inductors; Kinetic theory; Silicon; Substrates; Temperature; Thermal stability; X-ray scattering;
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
DOI :
10.1109/IWGI.2001.967574
