Title :
Characterization of hafnium and zirconium silicate films fabricated by plasma-enhanced chemical vapor deposition
Author :
Kato, Hiromitsu ; Nango, Tomohiro ; Miyagawa, Takeshi ; Katagiri, Takahiro ; Ohki, Yoshimichi
Author_Institution :
Dept. of Electrical, Electronics, & Comput. Eng., Waseda Univ., Tokyo, Japan
Abstract :
Recently, hafnium, and zirconium silicates have been considered to be attractive for new materials with high permittivity We have tried to deposit these silicate films by plasma-enhanced chemical vapor deposition (PECVD). In this report, we discuss the electrical properties and chemical structure of the deposited films.
Keywords :
X-ray photoelectron spectra; crystal structure; dielectric thin films; energy gap; hafnium compounds; permittivity; plasma CVD; zirconium compounds; HfSiO; PECVD; XPS; ZrSiO; band gap; chemical structure; electrical properties; hafnium silicate films; permittivity; plasma-enhanced chemical vapor deposition; zirconium silicate films; Chemical vapor deposition; Hafnium; Permittivity; Plasma chemistry; Plasma materials processing; Plasma temperature; Semiconductor films; Silicon compounds; Substrates; Zirconium;
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
DOI :
10.1109/IWGI.2001.967575
