Title :
Local electrical properties of HfO2 thin films measured by conducting atomic force microscopy
Author :
Goto, Tomokazu ; Sakashita, Shinsuke ; Ikeda, Hiroya ; Sakashita, Mitsuo ; Sakai, Akira ; Zaima, Shigeaki ; Yasuda, Yukio
Author_Institution :
Dept. of Crystalline Mater. Sci., Nagoya Univ., Japan
Abstract :
In this work, we investigated the local leakage characteristics of HfO/sub 2/ thin films, using conducting atomic force microscopy (C-AFM) and discussed the relationship between the surface morphology and the local leakage current microscopically.
Keywords :
atomic force microscopy; dielectric thin films; hafnium compounds; leakage currents; surface structure; C-AFM; HfO/sub 2/; HfO/sub 2/ thin films; conducting atomic force microscopy; local electrical properties; local leakage characteristics; local leakage current; surface morphology; Atomic force microscopy; Atomic measurements; Electric variables measurement; Force measurement; Hafnium oxide; Leakage current; Surface morphology; Transistors; Transmission electron microscopy; X-ray scattering;
Conference_Titel :
Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-021-6
DOI :
10.1109/IWGI.2001.967578
