• DocumentCode
    1936419
  • Title

    Local electrical properties of HfO2 thin films measured by conducting atomic force microscopy

  • Author

    Goto, Tomokazu ; Sakashita, Shinsuke ; Ikeda, Hiroya ; Sakashita, Mitsuo ; Sakai, Akira ; Zaima, Shigeaki ; Yasuda, Yukio

  • Author_Institution
    Dept. of Crystalline Mater. Sci., Nagoya Univ., Japan
  • fYear
    2001
  • fDate
    1-2 Nov. 2001
  • Firstpage
    180
  • Lastpage
    183
  • Abstract
    In this work, we investigated the local leakage characteristics of HfO/sub 2/ thin films, using conducting atomic force microscopy (C-AFM) and discussed the relationship between the surface morphology and the local leakage current microscopically.
  • Keywords
    atomic force microscopy; dielectric thin films; hafnium compounds; leakage currents; surface structure; C-AFM; HfO/sub 2/; HfO/sub 2/ thin films; conducting atomic force microscopy; local electrical properties; local leakage characteristics; local leakage current; surface morphology; Atomic force microscopy; Atomic measurements; Electric variables measurement; Force measurement; Hafnium oxide; Leakage current; Surface morphology; Transistors; Transmission electron microscopy; X-ray scattering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Gate Insulator, 2001. IWGI 2001. Extended Abstracts of International Workshop on
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-021-6
  • Type

    conf

  • DOI
    10.1109/IWGI.2001.967578
  • Filename
    967578
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1936419