• DocumentCode
    1936422
  • Title

    ATiN/TiSi2 Interconnect Structure Durable for High Temperature Processing

  • Author

    Gloesener, D. ; Rivas, G. ; Goffin, B. ; Verlinden, P. ; Van de Wicle, F.

  • Author_Institution
    Laboratoire do Microélectronique, Université Catholique de Louvain, Place du Levant, 3 1348 Louvain-la Neuve, Belgium
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    645
  • Lastpage
    648
  • Abstract
    A simple method has been developed to enhance the thermal stability of TiSi2. It allows a RTA reflow step at temperatures higher than 1000°c without any increase in TiSi2 resistivity nor degradation of the contact structure. Its efficiency has been separately demonstrated on a polycide process and on diffusion areas.
  • Keywords
    Contact resistance; Semiconductor films; Silicides; Silicon; Surface resistance; Temperature; Thermal resistance; Thermal stresses; Tin; Titanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436520
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1936422